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应用指南

有机FET的 DC I-V和AC 阻抗测试

9/15/2021

本技术指南概括介绍怎样使用4200A-SCS参数分析仪优化OFET的DC I-V和AC阻抗测量。讨论定时参数、降噪、屏蔽、正确布线及实现最佳效果的其他重要测量考虑因素。

解决方案简介

Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increa …

视频

Make I-V and C-V Measurements up to 2X Faster with the 4200A-SCS Parameter Analyzer

5/23/2019

Measuring new materials or devices? Watch how you can get insights faster-than-ever with hassle-free connections, faster test setup, and built-in test libraries and learning tools. See how to gain com …

在线研讨会

Tips and Techniques to Simplify MOSFET-MOSCAP Device Characterization

5/23/2019

This webinar presents a new process that makes characterization and parameter extraction easier and quicker. We'll be discussing the extraction of common parameters as well as which tests to run to ge …

学习中心

半导体测试系统

有机FET的 DC I-V和AC 阻抗测试

为新一代电力电子设计改进材料和测试

Tips and Techniques to Simplify MOSFET-MOSCAP Device Characterization